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1. product profile 1.1 general description 260 w ldmos packaged asymmetrical doherty power transistor for base station applications at frequencies from 1805 mhz to 1880 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 7.5 db at 0.01% probability on ccdf per carrier, carrier spacing 5 mhz. [2] i dq = 750 ma (main); v gs(amp)peak = 0.80 v. 1.2 features and benefits ? excellent ruggedness ? high-efficiency ? low r th providing excellent thermal stability ? designed for broadband operation (1805 mhz to 1880 mhz) ? asymmetrical design to achieve optimum efficiency across the band ? lower output capacitance for improved performance in doherty applications ? designed for low memory effect s providing excellent digita l pre-distortion capability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and gsm multi carrier applications in the 1805 mhz to 1880 mhz frequency range BLF8G20LS-260A power ldmos transistor rev. 1 ? 13 september 2012 objective data sheet table 1. typical performance typical rf performance at t case = 25 ? c in an asymetric doherty production test circuit. test signal f v ds p l(av) g p ? d acpr (mhz) (v) (w) (db) (%) (dbc) 2-carrier w-cdma [2] 1805 to 1880 28 50 15.5 43 ? 23 [1]
BLF8G20LS-260A all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. objective data sheet rev. 1 ? 13 september 2012 2 of 12 nxp semiconductors BLF8G20LS-260A power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1 drain1 (main) 2 drain2 (peak) 3 gate1 (main) 4 gate2 (peak) 5source [1] 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLF8G20LS-260A - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs(amp)main main amplifier gate-source voltage ? 0.5 +13 v v gs(amp)peak peak amplifier gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ? c t j junction temperature - 225 ? c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case v ds =28v; i dq = 750 ma (main); v gs(amp)peak = 0.80 v; t case =80 ?c p l = 50 w 0.36 k/w p l = 200 w 0.29 k/w
BLF8G20LS-260A all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. objective data sheet rev. 1 ? 13 september 2012 3 of 12 nxp semiconductors BLF8G20LS-260A power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLF8G20LS-260A is capable of withstanding a load mismatch corresponding to a vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 750 ma (main); v gs(amp)peak = 0.80 v; p l = 200 w (cw); f = 1805 mhz to 1880 mhz. table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit main device v (br)dss drain-source breakdown voltage v gs =0v; i d =1.44ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 144 ma 1.50 1.88 2.30 v i dss drain leakage current v gs =0v; v ds =28v--2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -27-a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d =7.20a - 10.8 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =5.04a -0.102- ? peak device v (br)dss drain-source breakdown voltage v gs =0v; i d =2.2ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 220 ma 1.50 1.80 2.30 v i dss drain leakage current v gs =0v; v ds =28v--2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -40-a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d = 11.0 a - 15.9 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =7.7a -0.067- ? table 7. rf characteristics test signal: 2-carrier w-cdma; par = 7.5 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1 - 64 dpch; f 1 = 1807.5 mhz; f 2 = 1812.5 mhz; f 3 = 1872.5 mhz; f 4 = 1877.5 mhz; rf performance at v ds =28v; i dq = 750 ma (main); v gs(amp)peak = 0.80 v; t case =25 ? c; unless otherwise specified; in an asymet ric doherty production test circuit in 1805 mhz to 1880 mhz. symbol parameter conditions min typ max unit g p power gain p l(av) = 50 w 15.5 - db rl in input return loss p l(av) =50w - ? 10 db ? d drain efficiency p l(av) = 50 w 43 - % acpr adjacent channel power ratio p l(av) =50w - ? 23 dbc
BLF8G20LS-260A all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. objective data sheet rev. 1 ? 13 september 2012 4 of 12 nxp semiconductors BLF8G20LS-260A power ldmos transistor 7.2 impedance information [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. table 8. typical impedance of main device measured load-pull data of main device; i dq = 750 ma (main); v ds = 28 v. f z s [1] z l [1] p l(3db) ? d [2] g p [2] (mhz) (? ) (? ) (w) (%) (db) peak power load 1810 0.9 ? j3.3 1.4 ? j3.9 191 59 15.5 1840 0.8 ? j3.4 1.4 ? j3.9 182 58 15.7 1880 0.8 ? j3.7 1.4 ? j3.9 182 58 15.6 peak drain efficiency load 1810 0.9 ? j3.3 2.3 ? j2.7 138 70 17.9 1840 0.8 ? j3.4 2.5 ? j2.5 123 69 18.5 1880 0.8 ? j3.7 2.1 ? j2.5 127 68 18.0 table 9. typical impedance of peak device measured load-pull data of peak device; i dq = 1200 ma (peak); v ds = 28 v. f z s [1] z l [1] p l(3db) ? d [2] g p [2] (mhz) (? ) (? ) (w) (%) (db) peak power load 1810 0.8 ? j3.5 1.7 ? j4.0 257 61 16.0 1840 0.8 ? j3.8 1.9 ? j4.3 257 59 15.8 1880 0.8 ? j3.9 1.9 ? j4.3 251 59 16.2 peak drain efficiency load 1810 0.8 ? j3.5 2.5 ? j2.5 178 70.0 18.6 1840 0.8 ? j3.8 2.5 ? j2.5 180 70.0 18.5 1880 0.8 ? j3.9 2.3 ? j2.7 182 68.0 18.8 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate
BLF8G20LS-260A all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. objective data sheet rev. 1 ? 13 september 2012 5 of 12 nxp semiconductors BLF8G20LS-260A power ldmos transistor 7.3 test circuit printed-circuit board (pcb): rogers ro4350; thickness = 0.508 mm. see table 10 for list of components. fig 2. component layout for test circuit table 10. list of components for test circuit, see figure 2 . component description value remarks c11, c12, c14, c15, c16, c22, c23, c25, c31 multilayer ceramic chip capacitor 30 pf atc100b c13 multilayer ceramic ch ip capacitor 0.5 pf atc800b c17, c26 multilayer ceramic chip capacitor 100 nf murata c18, c29 multilayer ce ramic chip capacitor 1 ? f murata c19, c27, c30, c32 multilayer ceramic chip capacitor 10 ? f murata c20, c28 electrolytic capacitor 2200 ? f panasonic c21 multilayer ceramic ch ip capacitor 0.3 pf atc800b c24 multilayer ceramic ch ip capacitor 1.2 pf atc800b r27 resistor 50 ? emc r28, r29 resistor 9.1 ? vishay dale r30 resistor 9.1 ? 1206 l3, l4 ferrite bead - fair rite 2743019447 l5, l6 inductor 12 nh coilcraft x1 hybrid coupler - anaren x3c19p1-03s

BLF8G20LS-260A all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. objective data sheet rev. 1 ? 13 september 2012 6 of 12 nxp semiconductors BLF8G20LS-260A power ldmos transistor 7.4 graphical data 7.4.1 cw pulsed v ds =28v; v gs(amp)main = 2.208 v; i dq = 746 ma; v gs(amp)peak =0.80v. (1) f = 1805 mhz (2) f = 1842.5 mhz (3) f = 1880 mhz v ds =28v; v gs(amp)main = 2.208 v; i dq = 746 ma; v gs(amp)peak =0.80v. (1) f = 1805 mhz (2) f = 1842.5 mhz (3) f = 1880 mhz fig 3. power gain and drain efficiency as function of load power; typical values fig 4. power gain and drain efficiency as function of load power; typical values v ds =28v; v gs(amp)main = 2.208 v; i dq = 746 ma; v gs(amp)peak =0.80v. (1) f = 1805 mhz (2) f = 1842.5 mhz (3) f = 1880 mhz fig 5. input return loss as a function of load power; typical values

BLF8G20LS-260A all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. objective data sheet rev. 1 ? 13 september 2012 7 of 12 nxp semiconductors BLF8G20LS-260A power ldmos transistor 7.4.2 2-carrier w-cdma v ds =28v; v gs(amp)main = 2.208 v; i dq = 746 ma; v gs(amp)peak =0.80v. (1) f = 1807.5 mhz (2) f = 1842.5 mhz (3) f = 1877.5 mhz v ds =28v; v gs(amp)main = 2.208 v; i dq = 746 ma; v gs(amp)peak =0.80v. (1) f = 1805 mhz (2) f = 1842.5 mhz (3) f = 1880 mhz fig 6. power gain and drain efficiency as function of load power; typical values fig 7. power gain and drain efficiency as function of load power; typical values v ds =28v; v gs(amp)main = 2.208 v; i dq = 746 ma; v gs(amp)peak =0.80v. (1) f = 1807.5 mhz (2) f = 1842.5 mhz (3) f = 1877.5 mhz fig 8. input return loss as a function of load power; typical values

BLF8G20LS-260A all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. objective data sheet rev. 1 ? 13 september 2012 8 of 12 nxp semiconductors BLF8G20LS-260A power ldmos transistor 8. package outline fig 9. package outline sot539b references outline version european projection issue date iec jedec jeita sot539b sot539b_po 11-10-28 12-05-02 unit (1) mm max nom min 4.7 4.2 11.81 11.56 31.55 30.94 31.52 30.96 9.5 9.3 9.53 9.27 1.75 1.50 17.12 16.10 3.48 2.97 10.29 10.03 0.25 a dimensions earless flanged balanced ceramic package; 4 leads sot539b bc 0.18 0.10 dd 1 ee 1 e 13.72 fhh 1 25.53 25.27 lq 2.26 2.01 u 1 32.39 32.13 u 2 w 2 0.25 mm max nom min 0.185 0.165 0.465 0.455 1.242 1.218 1.241 1.219 0.374 0.366 0.375 0.365 0.069 0.059 0.674 0.634 0.137 0.117 0.405 0.395 0.01 0.007 0.004 0.54 1.005 0.995 0.089 0.079 1.275 1.265 0.01 w 3 0 5 10 mm scale c e q e 1 e h l b h 1 u 1 u 2 d w 2 w 3 1 2 3 4 d d a f d 1 5 note 1. millimeter dimensions are derived from the original inch dimensions.
BLF8G20LS-260A all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. objective data sheet rev. 1 ? 13 september 2012 9 of 12 nxp semiconductors BLF8G20LS-260A power ldmos transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 11. abbreviations acronym description 3gpp third generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge gsm global system for mobile communications ldmos laterally diffused metal-oxide semiconductor par peak-to-average ratio vswr voltage standing wave ratio w-cdma wideband code division multiple access table 12. revision history document id release date data sheet status change notice supersedes BLF8G20LS-260A v.1 20120913 objective data sheet - -
BLF8G20LS-260A all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. objective data sheet rev. 1 ? 13 september 2012 10 of 12 nxp semiconductors BLF8G20LS-260A power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF8G20LS-260A all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. objective data sheet rev. 1 ? 13 september 2012 11 of 12 nxp semiconductors BLF8G20LS-260A power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLF8G20LS-260A power ldmos transistor ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 13 september 2012 document identifier: BLF8G20LS-260A please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 3 7.2 impedance information . . . . . . . . . . . . . . . . . . . 4 7.3 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.4 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.4.1 cw pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.4.2 2-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 7 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 handling information. . . . . . . . . . . . . . . . . . . . . 9 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 10 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 contact information. . . . . . . . . . . . . . . . . . . . . 11 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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